1.2 kV Rectifiers Thermal Behaviour: comparison between Si PiN, 4H-SiC Schottky and JBS diodes
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4417196/4417197/04417474.pdf?arnumber=4417474
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects;Renewable and Sustainable Energy Reviews;2019-10
2. Influence of three-dimensional p-buried layer pattern on the performance of 4H-SiC floating junction Schottky barrier diode;Japanese Journal of Applied Physics;2015-09-03
3. Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics;Solid State Phenomena;2013-10
4. Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation;Materials Science Forum;2013-01
5. An Investigation Into the Effects of the Gate Drive Resistance on the Losses of the MOSFET–Snubber–Diode Configuration;IEEE Transactions on Power Electronics;2012-05
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