Effect of Chip Metallization and Process Parameters on the Die Attach Properties of Direct Bonded Power Devices-Reference-Cited by-同舟云学术

Effect of Chip Metallization and Process Parameters on the Die Attach Properties of Direct Bonded Power Devices

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
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Author:

Curkin Michael¹,Köhler Marius¹,Kraft Silke²,Mueller Jens²,Besendoerfer Kurt-Georg²,Heuck Nicolas¹

Affiliation:

1. University of Applied Sciences,Hamm-Lippstadt,Lippstadt,Germany

2. Semikron Elektronik GmbH,Nuremberg,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195581.pdf?arnumber=10195581

Reference16 articles.

1. Influence of wire material and diameter on the reliability of AI-H11, AI-CR, AI-R and AIX heavy wire bonds during power cycling;ehrhardt;International Conference on Integrated Power Electronic Systems (CIPS),0

2. Examining Ag-Ag Direct Bonding on Chemically Coated DBC Substrates as a Pasteless Die-Attach Approach;haußler;International Exhibition and Conference for Power Electronics Intelligent Motion (PCIM Europe digital days) Renewable Energy and Energy Management,0

3. Using the Chip as a Temperature Sensor - The Influence of Steep Lateral Temperature Gradients on the VCE(T)-Measurement

4. Impact of Test Control Strategy on Power Cycling Lifetime;schuler;Power Conversion Intelligent Motion (PCIM),2010

5. Diffusion Welding of Alloys for Molten Salt Service - Status Report

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1. Reliability and Failure Mechanisms of Direct Bonded Power Semiconductor Devices in Power Cycling Test;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02