Analysis of electrical properties in MOS structure with a low surface roughness Al<sub>2</sub>O<sub>3</sub>-doped ZnO film as gate oxide-Reference-Cited by-同舟云学术

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Analysis of electrical properties in MOS structure with a low surface roughness Al₂O₃-doped ZnO film as gate oxide

Published:2022-04-22 Issue: Volume: Page:
ISSN:
Container-title:2022 8th International Conference on Applied System Innovation (ICASI)
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Author:

Yen Chih-Feng¹,Huang Yu-Ya¹,Tsao Shen-Hao¹,Hsu Hung-Chang¹

Affiliation:

1. National Kaohsiung University of Science and Technology,Department of Microelectronics Engineering,Kaohsiung City,Taiwan (R.O.C.)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9774394/9774395/09774484.pdf?arnumber=9774484

Reference13 articles.

1. Liquid-Phase Deposition of Al[sub 2]O[sub 3] Thin Films on GaN

2. Effect of alumina doping on structural, electrical, and optical properties of sputtered ZnO thin films

3. Energy‐Band Engineering by Remote Doping of Self‐Assembled Monolayers Leads to High‐Performance IGZO/p‐Si Heterostructure Photodetectors

4. Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

5. Electrical properties of zinc oxide sputtered thin films

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of incorporating CeO2 seed layer for overgrowth of Green synthesized CeO2 nanostructures deposited on Si (111) substrate;Journal of Materials Science: Materials in Electronics;2023-03

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