Annealing effect on the ZrO<sub>2</sub> gradual resistance change as a synaptic device-Reference-Cited by-同舟云学术

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Annealing effect on the ZrO₂ gradual resistance change as a synaptic device

Published:2022-04-22 Issue: Volume: Page:
ISSN:
Container-title:2022 8th International Conference on Applied System Innovation (ICASI)
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Author:

Lai Chun-Hung¹,Syu Ming-Yi¹,Liu Chih-Yi²,Lin Chao-Cheng³

Affiliation:

1. National United University,Department of Electronic Engineering,Miaoli,Taiwan,360302

2. National Kaohsiung University of Science and Technology,Department of Electronic Engineering,Kaohsiung,Taiwan,807618

3. Taiwan Semiconductor Research Institute,Hsinchu,Taiwan,300091

Funder

Ministry of Science and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9774394/9774395/09774471.pdf?arnumber=9774471

Reference9 articles.

1. Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics

2. Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory

3. Neuro-Inspired Computing With Emerging Nonvolatile Memorys

4. Thermal Conductivity: X, Data for Several Pure Oxide Materials Corrected to Zero Porosity

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