Fabrication of Stacked CMOS Image Sensor With NiO/Ga<sub>2</sub>O<sub>3</sub> UV Photoconversion Films Using Low-Oxygen RF-Sputtered NiO for Transparent Image Sensor-Reference-Cited by-同舟云学术

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Fabrication of Stacked CMOS Image Sensor With NiO/Ga₂O₃ UV Photoconversion Films Using Low-Oxygen RF-Sputtered NiO for Transparent Image Sensor

Published:2023-06 Issue:6 Volume:7 Page:1-4
ISSN:2475-1472
Container-title:IEEE Sensors Letters
language:
Short-container-title:IEEE Sens. Lett.

Author:

Mineo Keitada¹^ORCID,Imura Shigeyuki¹^ORCID,Miyamoto Yuji¹^ORCID,Goto Masahide¹^ORCID

Affiliation:

1. NHK Science & Technology Research Laboratories, Japan Broadcasting Corporation, Tokyo, Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7782634/10129999/10123129.pdf?arnumber=10123129

Reference30 articles.

1. Electrical properties of ZnO:H films fabricated by RF sputtering deposition and fabrication of p-NiO/n-ZnO heterojunction devices

2. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

3. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

4. Electrical properties of undoped and Li-doped NiO thin films deposited by RF sputtering without intentional heating

5. Crystalline Selenium Layer Stacked Image Sensors With Pixel-Parallel A/D Converters Toward Photon Counting

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