A Highly Sensitive Hydrogen Sensor Based on Pd/Ga2O3/AlGaN/GaN Schottky Diode
Author:
Affiliation:
1. Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung, Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7782634/9898898/09895269.pdf?arnumber=9895269
Reference11 articles.
1. Ga2O3Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors
2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
3. Investigation of hydrogen-sensing properties of Pd/AlGaAs-based Schottky diodes
4. InGaP/InGaAs field-effect transistor typed hydrogen sensor
5. Schottky diode based on porous GaN for hydrogen gas sensing application
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