Improved UV Photodetection Based on β-Ga2O3-NiO 1D–1D Heterostructure Arrays
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, National Institute of Technology Nagaland, Dimapur, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7782634/9973431/09966732.pdf?arnumber=9966732
Reference22 articles.
1. A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode
2. All-Oxide NiO/Ga2O3 p–n Junction for Self-Powered UV Photodetector
3. A novel high performance photodetection based on axial NiO/β-Ga2O3 p-n junction heterostructure nanowires array
4. Growth competition during glancing angle deposition of nanorod honeycomb arrays
5. Low-potential driven fully-depleted BiVO4/ZnO heterojunction nanodendrite array photoanodes for photoelectrochemical water splitting
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1. Design of non-volatile capacitive memory using axial type-II heterostructure nanowires of NiO/β-Ga2O3;Journal of Materials Science: Materials in Electronics;2024-03
2. Charge-carrier engineering of staggered-gap p-CuAlO2/β-Ga2O3 bipolar heterojunction for self-powered photodetector with exceptional linear dynamic range and stability;Materials Today Physics;2024-01
3. Effect of Deep Levels on the Temperature Dependence of the Capacitance-Voltage Characteristics and the Effective Density of Nio/Ga2o3 Heterojunction Diodes;2024
4. Charge-Carrier Engineering of Staggered-Gap P-Cualo2/Β-Ga2o3 Bipolar Heterojunction for Self-Powered Photodetector with Exceptional Linear Dynamic Range and Stability;2023
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