A 1.52 THz RTD Triple-Push Oscillator With a -Level Output Power-Reference-Cited by-同舟云学术

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A 1.52 THz RTD Triple-Push Oscillator With a -Level Output Power

Published:2016-03 Issue:2 Volume:6 Page:336-340
ISSN:2156-342X
Container-title:IEEE Transactions on Terahertz Science and Technology
language:
Short-container-title:IEEE Trans. THz Sci. Technol.

Author:

Lee Jooseok,Kim Maengkyu,Yang Kyounghoon

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Radiation

Link

http://xplorestaging.ieee.org/ielx7/5503871/7438979/7369990.pdf?arnumber=7369990

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1. High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes;Japanese Journal of Applied Physics;2024-08-01

2. Fundamentals and recent advances of terahertz resonant tunneling diodes;Applied Physics Express;2024-07-01

3. Island THz on-chip slot-antenna resonant-tunneling-diode oscillators;Applied Physics Letters;2023-07-24

4. Design and Characterization of Terahertz CORPS Beam Forming Networks;Journal of Infrared, Millimeter, and Terahertz Waves;2023-06

5. Very High-Power High-Frequency Resonant Tunnelling Diode Oscillators;2022 15th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT);2022-10-17

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