Analysis and Development of Submillimeter-Wave Stacked-FET Power Amplifier MMICs in 35-nm mHEMT Technology-Reference-Cited by-同舟云学术

Analysis and Development of Submillimeter-Wave Stacked-FET Power Amplifier MMICs in 35-nm mHEMT Technology

Published:2018-05 Issue:3 Volume:8 Page:357-364
ISSN:2156-342X
Container-title:IEEE Transactions on Terahertz Science and Technology
language:
Short-container-title:IEEE Trans. THz Sci. Technol.

Author:

Amado-Rey Ana Belen¹^ORCID,Campos-Roca Yolanda²^ORCID,van Raay Friedbert¹,Friesicke Christian¹,Wagner Sandrine¹,Massler Hermann¹,Leuther Arnulf¹^ORCID,Ambacher Oliver³

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany

2. Department of Computer and Communication Technologies, University of Extremadura, Caceres, Spain

3. Institute for Sustainable Systems Engineering, Albert-Ludwigs-University Freiburg, Freiburg, Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Radiation

Link

http://xplorestaging.ieee.org/ielx7/5503871/8353206/08303781.pdf?arnumber=8303781

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Terahertz metal-oxide-semiconductor transistors based on aligned carbon nanotube arrays;2023-03-30

2. Analysis and Design of Capacitive Voltage Distribution Stacked MOS Millimeter-Wave Power Amplifiers;IEEE Transactions on Circuits and Systems I: Regular Papers;2022-09

3. H-Band Broadband Balanced Power Amplifier in 250-nm InP HBT Technology Using Impedance-Transforming Balun;IEEE Access;2022

4. A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers;IEEE Transactions on Microwave Theory and Techniques;2020-07

5. Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology;IEEE Transactions on Terahertz Science and Technology;2020-05