Electrical and Noise Modeling of GaAs Schottky Diode Mixers in the THz Band-Reference-Cited by-同舟云学术

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Electrical and Noise Modeling of GaAs Schottky Diode Mixers in the THz Band

Published:2016-01 Issue:1 Volume:6 Page:69-82
ISSN:2156-342X
Container-title:IEEE Transactions on Terahertz Science and Technology
language:
Short-container-title:IEEE Trans. THz Sci. Technol.

Author:

Pardo Diego,Grajal Jesus,Perez Susana

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Radiation

Link

http://xplorestaging.ieee.org/ielx7/5503871/7387802/7348725.pdf?arnumber=7348725

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 1 THz Schottky transceiver front‐end based on 5 μm GaAs monolithic membrane;Microwave and Optical Technology Letters;2022-08-24

2. Low-noise sub-harmonic-mixing in 300-GHz band by Fermi-level managed barrier diode;Applied Physics Express;2021-09-09

3. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes;IEEE Transactions on Electron Devices;2021-09

4. Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes;IEEE Transactions on Electron Devices;2020-09

5. A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach;International Journal of Microwave and Wireless Technologies;2017-09-18

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