MHEMT $G$-Band Low-Noise Amplifiers-Reference-Cited by-同舟云学术

MHEMT $G$-Band Low-Noise Amplifiers

Published:2014-07 Issue:4 Volume:4 Page:459-468
ISSN:2156-342X
Container-title:IEEE Transactions on Terahertz Science and Technology
language:
Short-container-title:IEEE Trans. THz Sci. Technol.

Author:

Karkkainen Mikko¹,Kantanen Mikko²,Caujolle-Bert Sylvain³,Varonen Mikko¹,Weber Rainer⁴,Leuther Arnulf⁴,Seelmann-Eggebert Matthias⁴,Alanne Ari⁵,Jukkala Petri⁵,Narhi Tapani⁶,Halonen Kari A. I.¹

Affiliation:

1. School of Electrical Engineering, Department of Micro- and Nanosciences, Aalto University, Aalto, Finland

2. VTT Technical Research Centre of Finland, Finland

3. LATMOS-CNRS, Guyancourt, France

4. Fraunhofer Institute for Applied Physics (IAF), Freiburg, Germany

5. DA-Design Oy, Jokioinen, Finland

6. European Space Agency (ESTEC), Noordwijk, the Netherlands

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Radiation

Link

http://xplorestaging.ieee.org/ielx7/5503871/6844906/06828797.pdf?arnumber=6828797

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