A Backside-Illuminated 3.5 μm Pixel With 86% Demodulation Contrast at 1.0 V Voltage Swing for Indirect Time-of-Flight Image Sensors
Author:
Affiliation:
1. School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
2. Southwest Institute of Technical Physics, Chengdu, China
Funder
National Natural Science Foundation of China
Shaanxi Key Research and Development Plan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10227840/10206431.pdf?arnumber=10206431
Reference26 articles.
1. A Range Image Sensor Based on 10-$\mu{\hbox {m}}$ Lock-In Pixels in 0.18-$\mu$m CMOS Imaging Technology
2. Drift Field Implementation in Large Pinned Photodiodes for Improved Charge Transfer Speed
3. Indirect ToF pixel integrating fast buried-channel transfer gates and gradual epitaxy and enabling CDS;rodrigues;Proc IISW,2017
4. An 80×60 range image sensor based on 10 ?m 50 MHz lock-in pixels in 0.18 ?m CMOS;stoppa;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2010
5. Optimization of Pinned Photodiode Pixels for High-Speed Time of Flight Applications
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