Low-Voltage Solution-Processed CuBrXI1−X Thin-Film Transistors With NAND Logic Function
Author:
Affiliation:
1. School of Physics and Electronics, Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Hunan Normal University, Changsha, China
Funder
National Natural Science Foundation of China
Research Foundation of Education Bureau of Hunan Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10159202/10138799.pdf?arnumber=10138799
Reference25 articles.
1. Fast electrochromic switching of electrospun Cu-doped NiO nanofibers
2. Low-temperature combustion synthesis and UV treatment processed p-type Li:NiOx active semiconductors for high-performance electronics
3. Copper halide anion engineering for p-channel electrolyte-gated transistors with superior operational reliability
4. Truly Transparent p-Type γ-CuI Thin Films with High Hole Mobility
5. Transparent Inorganic Copper Bromide (CuBr) p-Channel Transistors Synthesized From Solution at Room Temperature
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