A Novel Field-Plated Lateralβ-Ga2O3MOSFET Featuring Self-Aligned Vertical Gate Structure-Reference-Cited by-同舟云学术

A Novel Field-Plated Lateralβ-Ga₂O₃MOSFET Featuring Self-Aligned Vertical Gate Structure

Published:2023-08 Issue:8 Volume:70 Page:4309-4314
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Gao Meng¹^ORCID,Huang Huolin²^ORCID,Yin Luqiao¹^ORCID,Lu Xiuzhen¹,Zhang Jianhua¹,Ren Kailin¹^ORCID

Affiliation:

1. School of Microelectronics, the Key Laboratory of Advanced Display and System Applications (Ministry of Education) and the Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle, Shanghai University, Shanghai, China

2. School of Optoelectronic Engineering and Instrumentation Science and the School of Microelectronics, Dalian University of Technology, Dalian, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shanghai

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10194493/10177216.pdf?arnumber=10177216

Reference30 articles.

1. Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

2. Influence of postdeposition annealing on the properties of Ga2O3 films on SiO2 substrates;woo;J Alloys Compounds,2005

3. A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

4. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

5. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

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