Improved Hot-Carrier Reliability of an Ultralow <i>R</i> <sub>ON,sp</sub> SOI-LDMOS by Linearly Doped Technology for Automotive Application-Reference-Cited by-同舟云学术

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Improved Hot-Carrier Reliability of an Ultralow R _ON,sp SOI-LDMOS by Linearly Doped Technology for Automotive Application

Published:2024-01 Issue:1 Volume:71 Page:935-939
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lu Li¹,Bian Jiaojing¹,Ma Shulang²,Liu Yongsheng³,Dai Yixin¹,Zhu Zhihan¹,Liu Siyang¹^ORCID,Sun Weifeng¹^ORCID,Lin Feng¹,Xu Chaoqi²,Xu Penglong²

Affiliation:

1. National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing, China

2. CSMC Technologies Corporation, Wuxi, China

3. Jiangsu Hehe Guanwen Network Technology Corporation, Suzhou, China

Funder

National Natural Science Foundation of China

Foundation for Scientific and Technological Achievements Transformation of Jiangsu Province

Distinguished Young Scientists Foundation of Jiangsu Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10382412/10354020.pdf?arnumber=10354020

Reference15 articles.

1. A Novel High Voltage Ultra-Thin SOI-LDMOS With Sectional Linearly Doped Drift Region

2. Improvement of SOI Trench LDMOS Performance With Double Vertical Metal Field Plate

3. An Improved Quasi-Saturation and Charge Model for SOI-LDMOS Transistors

4. Approach to the silicon limit: Advanced NLDMOS in 0.13 μm SOI technology for automotive and industrial applications up to 110V

5. 40 V to 100 V NLDMOS built on thin BOX SOI with high energy capability, state of the art Rdson/BVdss and robust performance

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A High-Performance and Low HCI Degradation LDMOS Device With a Hybrid Field Plate;IEEE Journal of the Electron Devices Society;2024

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