Eliminating the Double-Slope Behavior of Organic Field-Effect Transistors by Functionalizing the Dielectric Surface With a High Electron Affinity Self-Assembly Monolayer-Reference-Cited by-同舟云学术

Eliminating the Double-Slope Behavior of Organic Field-Effect Transistors by Functionalizing the Dielectric Surface With a High Electron Affinity Self-Assembly Monolayer

Published:2024-01 Issue:1 Volume:71 Page:777-781
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hu Yuanhong¹,Fu Huaijie¹,Zhang Qiaoming¹,Peng Jinlei¹,Wei Jiyuan¹,Tan Xingwen¹,Qiu Xuejun²,Lei Yanlian¹^ORCID

Affiliation:

1. School of Physical Science and Technology, Chongqing Key Laboratory of Micro and Nano Structure Optoelectronics, Southwest University, Chongqing, China

2. School of Health Science, Guangdong Provincial Engineering and Technology Research Center for Light and Health, Guangdong Pharmaceutical University, Guangzhou, China

Funder

Fundamental Research Funds for the Central Universities

Natural Science Foundation Project of Chongqing Science and Technology Commission

Science and Technology Research Program of Chongqing Municipal Education Commission

Venture and Innovation Support Program for Chongqing Overseas Returnees

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10382412/10354044.pdf?arnumber=10354044

Reference27 articles.