Investigation of the Global Shutter Operation of the Quantum-Dot Short-Wave Infrared Image Sensor-Reference-Cited by-同舟云学术

Investigation of the Global Shutter Operation of the Quantum-Dot Short-Wave Infrared Image Sensor

Published:2023-06 Issue:6 Volume:70 Page:3155-3159
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kim Jaenam¹^ORCID,Kim Joo-Hyoung²^ORCID,Chang Yun-Tzu¹,Park Jihoon³^ORCID,Jin Minhyun⁴^ORCID,Pejović Vladimir⁵^ORCID,Georgitzikis Epimitheas²^ORCID,Thijs Steven²^ORCID,Lieberman Itai²^ORCID,Li Yunlong²^ORCID,Heremans Paul⁵^ORCID,Malinowski Paweł²^ORCID,Chun Jung-Hoon³^ORCID,Lee Jiwon⁶^ORCID

Affiliation:

1. IMEC, Leuven, Belgium

2. Department of Electrical Engineering (ESAT) of KU Leuven, Leuven, Belgium

3. Department of Semiconductor Science, Dongguk University, Seoul, Republic of Korea

4. Department of Semiconductor Systems Engineering, Sungkyunkwan University, Suwon, Republic of Korea

5. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea

6. Department of Photonics and Nanoelectronics, BK21 FOUR ERICA-ACE Center, Hanyang University ERICA, Ansan, Gyeonggi-do, Republic of Korea

Funder

Ministry of Trade, Industry, and Energy (MOTIE), Republic of Korea, under the Fostering Global Talents for Innovative Growth Program

Korea Institute for Advancement of Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10136238/10122572.pdf?arnumber=10122572

Reference19 articles.

1. Imaging in short-wave infrared with 1.82μm pixel pitch quantum dot image sensor;Lee

2. Thin-Film Quantum Dot Photodiode for Monolithic Infrared Image Sensors

3. Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging

4. An 8K4K-resolution 60fps 450ke−-saturation-signal organic-photoconductive-film global-shutter CMOS image sensor with in-pixel noise canceller

5. Back-illuminated voltage-domain global shutter CMOS image sensor with 3.75µm pixels and dual in-pixel storage nodes

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thin-Film Photogate Pixel With Fixed Photodiode Bias for Near-Infrared Imaging;IEEE Electron Device Letters;2023-12