Unveiling the Interfacial Behavior of Au Contacted MoS<sub>2</sub> Atomristor and the Role of Point Defects-Reference-Cited by-同舟云学术

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Unveiling the Interfacial Behavior of Au Contacted MoS₂ Atomristor and the Role of Point Defects

Published:2023-12 Issue:12 Volume:70 Page:6622-6629
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shah Asif A.¹^ORCID,Kumar Jeevesh¹^ORCID,Dar Aadil Bashir¹^ORCID,Shrivastava Mayank¹^ORCID

Affiliation:

1. Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, India

Funder

Swarnajayanti Fellowship of Department of Science and Technology (DST), Government of India through the Indian Institute of Science, Bengaluru

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10328902/10299616.pdf?arnumber=10299616

Reference36 articles.

1. Nonvolatile resistance switching in monolayer transition metal dichalcogenides: an explanation

2. Periodic Modulation of the Doping Level in Striped MoS2 Superstructures

3. Understanding of Multiple Resistance States by Current-sweep Measurement and Compliance Current Modulation in 2D MoS2-based Non-volatile Resistance Switching Devices

4. Ab-initiosimulations of materials using VASP: Density-functional theory and beyond

5. Resistive switching mechanism of MoS2 based atomristor

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