A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors-Reference-Cited by-同舟云学术

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A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors

Published:2023-09 Issue:9 Volume:70 Page:4963-4967
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yu Zuoxu¹,Yang Guangan¹^ORCID,Xu Hansong¹,Cao Jie¹,Tian Hao¹,Huang Tingrui¹,Xu Yong²,Sun Huabin²^ORCID,Sun Weifeng¹^ORCID,Wu Wangran¹^ORCID

Affiliation:

1. School of Electronic Science and Engineering and National ASIC System Engineering Research Center, Southeast University, Nanjing, China

2. School of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10227840/10213221.pdf?arnumber=10213221

Reference29 articles.

1. A Full-Swing a-IGZO TFT-Based Inverter With a Top-Gate-Bias-Induced Depletion Load

2. A 1-V Supply a-InGaZnO-Based Voltage Reference With Enhancement- and Depletion-Mode Thin-Film Transistors

3. Full-Swing a-IGZO Inverter With a Depletion Load Using Negative Bias Instability Under Light Illumination

4. High-gain, low-voltage BEOL logic gate inverter built with film profile engineered IGZO transistors

5. High performance low voltage amorphous oxide TFT Enhancement/Depletion inverter through uni-/bi-layer channel hybrid integration

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-project wafers for flexible thin-film electronics by independent foundries;Nature;2024-04-24

2. Improved reliability of a-IGZO thin-film transistor under positive gate bias stress by utilizing NH3 plasma treatment;Microelectronics Reliability;2023-12

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