Investigation of the Gate Voltage Overshoot of IGBTs Under Short Circuit Type II Condition
Author:
Affiliation:
1. Power Electronics, Chemnitz University of Technology, Chemnitz, Germany
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10081247/10056838.pdf?arnumber=10056838
Reference9 articles.
1. IGBT self-turn-off under short-circuit condition;basler;Proc Int Conf 10th Int Seminar Power Semicond,2010
2. Effect of self turn-on during turn-on of HV-IGBTs;muenster;Proc Int Exhib Conf Power Electron Intell Motion Renew Energy Energy Manag,2016
3. Effect of the miller-capacitance during switching transients of IGBT and MOSFET
4. Dependence of the input impedance of a three-electrode vacuum tube upon the load in the plate circuit;miller;Sci Papers Bureau Standards,1920
5. Short-circuit ruggedness of high-voltage IGBTs
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