Investigation of Threshold Voltage and Drain Current Degradations in Si<sub>3</sub>N<sub>4</sub>/AlGaN/GaN MIS-HEMTs Under X-Ray Irradiation-Reference-Cited by-同舟云学术

Investigation of Threshold Voltage and Drain Current Degradations in Si₃N₄/AlGaN/GaN MIS-HEMTs Under X-Ray Irradiation

Published:2023-05 Issue:5 Volume:70 Page:2216-2221
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kuo Hung-Ming¹^ORCID,Chang Ting-Chang²^ORCID,Chang Kai-Chun¹,Lin Hsin-Ni¹,Kuo Ting-Tzu³,Yeh Chien-Hung⁴,Lee Ya-Huan¹,Lin Jia-Hong¹,Tsai Xin-Ying⁵,Huang Jen-Wei⁶,Sze Simon⁷

Affiliation:

1. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

2. Department of Physics and the Center of Crystal Research, National Sun Yat-sen University, Kaohsiung, Taiwan

3. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan

4. Department of Photonics, National Sun Yat-sen University, Kaohsiung, Taiwan

5. Department of Materials and Optoelectronic Science, Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

6. Department of Physics, Republic of China Military Academy, Kaohsiung, Taiwan

7. Department of Electronics Engineering, Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10106527/10075406.pdf?arnumber=10075406

Reference28 articles.

1. Review—Ionizing Radiation Damage Effects on GaN Devices

2. Atomic geometry and electronic structure of native defects in GaN

3. Proton Radiation-Induced Void Formation in Ni/Au-Gated AlGaN/GaN HEMTs

4. A Comparison of Single-Event Transients in Pristine and Irradiated ${{\rm Al}_{0.3}}{{\rm Ga}_{0.7}}{{\rm N}/{\rm GaN}}$ HEMTs using Two-Photon Absorption and Heavy Ions

5. The time response for the low-temperature poly-silicon thin-film transistors to x-ray irradiation pulse

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1. 1.5-kV AlGaN/GaN MIS-HEMT With 3-D Stacking Pad-Connected Schottky Structure Demonstrating Radiation Robustness Against Atmospheric Neutrons;IEEE Electron Device Letters;2024-07

2. Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation;IEEE Access;2024

3. Improving Performance of Al2O3/AlN/GaN MIS HEMTs via In Situ N2 Plasma Annealing;Micromachines;2023-05-23