Low-Temperature Processed Complementary Inverter With Tin-Based Transparent Oxide Semiconductors-Reference-Cited by-同舟云学术

Low-Temperature Processed Complementary Inverter With Tin-Based Transparent Oxide Semiconductors

Published:2023-10 Issue:10 Volume:70 Page:5133-5139
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lee Chankyu¹^ORCID,Hong Jin-Hwan²^ORCID,Shin Jaewoo¹^ORCID,Lee Saemi¹^ORCID,Kim Minsoo¹^ORCID,Park Sungsoo¹^ORCID,Cho Junehyeong¹^ORCID,Nguyen Thanh Tien³^ORCID,Choi Byoungdeog¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon-si, South Korea

2. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon-si, South Korea

3. Display Research Center, Samsung Display Company Ltd., Yongin-si, South Korea

Funder

National Research Foundation of Korea

Korean Government

Competency Development Program for Industry Specialists of the Korean Ministry of Trade, Industry and Energy (MOTIE), operated by Korea Institute for Advancement of Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10261402/10230911.pdf?arnumber=10230911

Reference34 articles.

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4. p-channel thin-film transistor using p-type oxide semiconductor, SnO

5. Sol–Gel Processed p-Type CuAlO2 Semiconductor Thin Films and the Integration in Transistors