Thermally Induced Current Bifurcation and Drastically Collapse of Output Optical Power in VCSEL Arrays-Reference-Cited by-同舟云学术

Thermally Induced Current Bifurcation and Drastically Collapse of Output Optical Power in VCSEL Arrays

Published:2023-12 Issue:12 Volume:70 Page:6415-6420
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jin Dongyue¹^ORCID,Zhou Yuxin¹,Guan Baolu²,Zhang Wanrong¹,Xie Hongyun¹^ORCID,Na Weicong¹^ORCID

Affiliation:

1. RFIC Laboratory, Faculty of Information Technology, Beijing University of Technology, Beijing, China

2. Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing, China

Funder

National Natural Science Foundation of China

Beijing Municipal Natural Science Foundation, China

Beijing Municipal Education Committee

Postdoctoral Science Foundation of Beijing

China Postdoctoral Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10328902/10304094.pdf?arnumber=10304094

Reference12 articles.

1. Thermally induced current bifurcation in bipolar transistors

2. Thermal Design of VCSEL Arrays for Optical Output Power Improvement

3. Dynamic characteristics and device degradation of GaN-based vertical-cavity surface-emitting laser with an AlInN/GaN distributed Bragg reflector

4. Experimental proof of current bifurcation and mutual heating in bipolar transistor arrays

5. New Packaging Technology for Disruptive 1- and 2- Dimensional VCSEL Arrays and Their Electro- Optical Performance and Applications