High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect-Reference-Cited by-同舟云学术

High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect

Published:2023-04 Issue:4 Volume:70 Page:2098-2105
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Chun-Kuei¹^ORCID,Hooda Sonu¹,Fang Zihang¹,Lal Manohar¹,Xu Zefeng¹,Pan Jieming¹^ORCID,Tsai Shih-Hao¹^ORCID,Zamburg Evgeny¹^ORCID,Thean Aaron Voon-Yew¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, Queenstown, Singapore

Funder

Agency for Science, Technology and Research (A∗STAR), Singapore, under its Advanced Manufacturing and Engineering (AME) Programmatic Funds

National Research Foundation (NRF)’s Medium Sized Centre: Singapore Hybrid-Integrated Next-Generation μ-Electronics (SHINE) Centre Funding Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10043682.pdf?arnumber=10043682

Reference51 articles.

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2. A Novel High-Endurance FeFET Memory Device Based on ZrO₂ Anti-Ferroelectric and IGZO Channel

3. Electronic structure of oxygen interstitial defects in amorphous In–Ga–Zn–O semiconductors and implications for device behavior;han;Phys Rev A Gen Phys,2015

4. Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors

5. Experimental Demonstration of Ferroelectric HfO2 FET with Ultrathin-body IGZO for High-Density and Low-Power Memory Application

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