Graphene-Integrated Negative Quantum Capacitance Field-Effect Transistor With Sub-60-mV/dec Switching
Author:
Affiliation:
1. School of Microelectronics, Fudan University, Shanghai, China
2. Engineering Physics Division, National Institute of Standards and Technology, Gaithersburg, MD, USA
Funder
National Natural Science Foundation of China
National Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/16/10227840/10189090-aam.pdf
Reference35 articles.
1. Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment
2. Boron Nitride–Graphene Nanocapacitor and the Origins of Anomalous Size-Dependent Increase of Capacitance
3. Steep-Slope Negative Quantum Capacitance Field-Effect Transistor
4. Subwavelength coupling and ultra-high exponential gain coefficient originating from 2D electron gas at ITO/LiNbO3 interface
5. A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current
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