A 144-fJ/Bit Reliable and Compact TRNG Based on the Diffusive Resistance of 3-D Resistive Random Access Memory-Reference-Cited by-同舟云学术

A 144-fJ/Bit Reliable and Compact TRNG Based on the Diffusive Resistance of 3-D Resistive Random Access Memory

Published:2023-08 Issue:8 Volume:70 Page:4139-4144
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Li Xiaoran¹^ORCID,Wang Yiming¹^ORCID,Yang Yiming¹^ORCID,Lv Shidong¹,Luo Qing²^ORCID,Wang Xinghua¹^ORCID,Xu Xiaoxin²^ORCID,Lei Dengyun³^ORCID,Zhang Feng²^ORCID

Affiliation:

1. School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, China

2. Institute of Microelectronics, Chinese Academy of Science, Beijing, China

3. School of Integrated Circuits, Guangdong University of Technology, Guangzhou, China

Funder

National Key Research Plan of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10194493/10172158.pdf?arnumber=10172158

Reference26 articles.

1. Novel Concept of Hardware Security in Using Gate-switching FinFET Nonvolatile Memory to Implement True-Random-Number Generator

2. True Random Number Generation Using Latency Variations of FRAM

3. OxRAM RNG Circuits Exploiting Multiple Undesirable Nanoscale Phenomena

4. True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM

5. A 28 nm integrated true random number generator harvesting entropy from MRAM;yang;Proc IEEE Symp VLSI Circuits,2018

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