Improved RF Performances by Applying Asymmetric Passivation and Air-Bridged Field Plate in AlGaN/GaN HEMTs With Reliability-Based Simulation
Author:
Affiliation:
1. Division of Electronics and Electrical Engineering, Dongguk University—Seoul, Seoul, South Korea
2. ICT Materials and Components Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon, South Korea
Funder
Institute of Information and Communications Technology Planning and Evaluation (IITP) through the Korea government
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10382412/10315074.pdf?arnumber=10315074
Reference25 articles.
1. A Survey of Wide Bandgap Power Semiconductor Devices
2. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
3. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
4. Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability
5. AlGaN/GaN HEMTs-an overview of device operation and applications
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1. Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study;Micromachines;2023-12-27
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