Thermal impact of InGaAs on InP based HBTs-Reference-Cited by-同舟云学术

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Thermal impact of InGaAs on InP based HBTs

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Container-title:GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)
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Author:

Ray M.,Hill D.,Hartin O.,Johnson K.,Li P.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7629/20818/00964390.pdf?arnumber=964390

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A two-dimensional analytical subthreshold behavior model for short-channel dual-material gate (DMG) AlGaAs/GaAs HFETs;2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC);2009-12

2. The effects of ternary alloys on thermal resistances of HBTs, HEMTs, and laser diodes;Microelectronics Reliability;2003-06

3. Transistor design and application considerations for < 200-GHz SiGe HBTs;IEEE Transactions on Electron Devices;2003-03

4. 43 Gbit∕s automatic gain control amplifier based on InP SHBT technology;Electronics Letters;2003

5. State of the art thermal analysis of GaAs/InGaP HBT;2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573)

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