Improvement on the Gate Oxide Integrity Caused by the TUB Charges in SOI Technology
Author:
Affiliation:
1. Yield Enhancement, Yield Enhancement,Kuching,Sarawak,Malaysia,93350
2. Research and Development3, Research and Developement,Kuching,Sarawak,Malaysia,93350
3. Etch Module X-FAB Sarawak Sdn. Bhd.,Kuching,Sarawak,Malaysia,93350
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10545359/10545360/10545493.pdf?arnumber=10545493
Reference6 articles.
1. Properties of boron implanted silicon dioxide
2. Surface Wettability of Oxygen Plasma Treated Porous Silicon
3. Role of Hydroxyls in Oxide Wettability
4. The effects of oxygen plasma and humidity on surface roughness, water contact angle and hardness of silicon, silicon dioxide and glass
5. Influence of Substrates and Pretreatment on Adhesion Contact Angle As a Method for Litho Process Improvement;Guo;X-FAB Sarawak,2008
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