Author:
Hirai Y.,Tomida S.,Ikeda K.,Sasago M.,Endo M.,Hayama S.,Nomura N.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software
Cited by
42 articles.
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1. Effects of stochastic exposure on critical dimension in electron-beam lithography;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-11
2. Proximity effect correction in electron-beam lithography based on computation of critical-development time with swarm intelligence;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-09
3. Dependency analysis of line edge roughness in electron-beam lithography;Microelectronic Engineering;2015-02
4. Determination and analysis of minimum dose for achieving vertical sidewall in electron-beam lithography;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-11
5. Minimization of line edge roughness and critical dimension error in electron-beam lithography;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-11