Optimization of substrate-lens-coupled CMOS field-effect transistor detectors for 250 GHz by pixel binning technique
Author:
Affiliation:
1. Institute of Applied Electrodynamics and Telecommunications, Vilnius University,Vilnius,Lithuania,10257
2. Institute of High Pressure Physics PAS,CENTERA Laboratories,Warsaw,Poland,01-142
Funder
European Regional Development Fund
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10298848/10298849/10299246.pdf?arnumber=10299246
Reference7 articles.
1. Antenna-coupled field-effect transistors as detectors for terahertz near-field microscopy
2. Camera for High-Speed THz Imaging
3. Compact terahertz devices based on silicon in CMOS and BiCMOS technologies;but;Opto-Electronics Review,2023
4. Coupled dual-layer antenna for optimized 250 GHz silicon CMOS detector
5. Ex Vivo Breast Tumor Identification: Advances Toward a Silicon-Based Terahertz Near-Field Imaging Sensor
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