High-harmonic generation in p-doped Si by band non-parabolicity, energy-dependent relaxation and dopant photo-ionization-Reference-Cited by-同舟云学术

High-harmonic generation in p-doped Si by band non-parabolicity, energy-dependent relaxation and dopant photo-ionization

Published:2023-09-17 Issue: Volume: Page:
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Container-title:2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
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Author:

Meng Fanqi¹,Walla Frederik¹,Kovalev Sergey²,Deinert Jan-Christoph²,Ilyakov Igor²,Chen Min²,Ponomaryov Alexey²,Pavlov Sergey G.³,Hübers Heinz-Wilhelm³,Abrosimov Nikolay V.⁴,Jungemann Christoph⁵,Roskos Hartmut G.¹,Thomson Mark D.¹

Affiliation:

1. Goethe-Universität Frankfurt,Physikalisches Institut,Frankfurt am Main,Germany,60438

2. Helmholtz-Zentrum Dresden-Rossendorf,Dresden,Germany,01328

3. Institute of Optical Sensor Systems,German Aerospace Center (DLR),Berlin,Germany,12489

4. Leibniz-Institut für Kristallzüchtung (IKZ),Berlin,Germany,12489

5. RWTH Aachen,Institut für Theoretische Elektrotechnik,Aachen,Germany,52062

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10298848/10298849/10299153.pdf?arnumber=10299153

Reference10 articles.

1. Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization;meng;arXiv 2303 01564,0

2. Importance of valence-band anharmonicity and carrier distribution for third- and fifth-harmonic generation in Si:B pumped with intense terahertz pulses

3. Massively parallel FDTD full-band Monte Carlo simulations of electromagnetic THz pulses in p-doped silicon at cryogenic temperatures

4. Extremely efficient terahertz high-harmonic generation in graphene by hot Dirac fermions;hafez;Nature,2018

5. Observation of high-order harmonic generation in a bulk crystal