LT-GaAs metasurfaces as continuous-wave THz detectors operating in the telecommunications band
Author:
Affiliation:
1. University College London,Electronic and Electrical Engineering,London,United Kingdom,WC1E 7JE
2. Center for Integrated Nanotechnologies, Sandia National Laboratories,Albuquerque,New Mexico,USA,87123
Funder
U.S. Department of Energy
Basic Energy Sciences
Center for Integrated Nanotechnologies
National Nuclear Security Administration
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10298848/10298849/10299343.pdf?arnumber=10299343
Reference4 articles.
1. Near-Field Spectroscopy and Imaging of Subwavelength Plasmonic Terahertz Resonators
2. Highly efficient terahertz photoconductive metasurface detectors operating at microwatt-level gate powers
3. Terahertz Detection Using Enhanced Two‐Step Absorption in Photoconductive Metasurfaces Gated at λ = 1.55 µm
4. Carrier lifetime versus anneal in low temperature growth GaAs
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