Free-Electron Infrared Nonlinearities in Heavily Doped InGaAs Nanoantennas-Reference-Cited by-同舟云学术

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Free-Electron Infrared Nonlinearities in Heavily Doped InGaAs Nanoantennas

Published:2023-09-17 Issue: Volume: Page:
ISSN:
Container-title:2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
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Author:

Ortolani M.¹,Venanzi T.²,Rossetti A.³,Deckert T.³,Brida D.³,Pea M.⁴,Bousseksou A.⁵,Lucia L.⁵,Colombelli R.⁵,Hu Huatian⁶,De Luca F.⁶,Ciracì C.⁶

Affiliation:

1. Sapienza University of Rome,Department of Physics,Italy,00185

2. Istituto Italiano di Tecnologia (IIT),Center for Life Neuro and Nano Sciences,Rome,Italy,00161

3. University of Luxembourg,Department of Physics and Materials Science,Luxembourg,L-1511

4. CNR Institute for Photonics and Nanotechnologies (IFN),Rome,Italy,00133

5. University of Paris-Saclay,CNRS Centre de Nanosciences et de Nanotechnologie (C2N),France,91120

6. Istituto Italiano di Tecnologia (IIT),Center for Biomolecular Nanotechnologies,Lecce,Italy,73010

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10298848/10298849/10298854.pdf?arnumber=10298854

Reference4 articles.

1. Plasmonic mid-infrared third harmonic generation in germanium nanoantennas

2. Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates

3. Impact of Surface Charge Depletion on the Free Electron Nonlinear Response of Heavily Doped Semiconductors

4. Free electron nonlinearities in heavily doped semiconductors plasmonics

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