Interplay between intervalley scattering and impact ionization induced by intense terahertz pulse in InSb thin films-Reference-Cited by-同舟云学术

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Interplay between intervalley scattering and impact ionization induced by intense terahertz pulse in InSb thin films

Published:2023-09-17 Issue: Volume: Page:
ISSN:
Container-title:2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
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Author:

Garcia-Rosas C. M.¹,Ropagnol X.¹,Guiramand L.²,Blanchard F.²,Ozaki T.¹

Affiliation:

1. Institut National de la Recherche Scientifique-Énergie Matériaux Télécommunications, 1650 boulevard Lionel Boulet,Varennes,Québec,Canada,J3X 1P7

2. École de technologie supérieure (ÉTS), 1100 rue Notre-Dame Ouest,Département de Génie Électrique,Montréal,Québec,Canada,H3C1K3

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10298848/10298849/10298922.pdf?arnumber=10298922

Reference18 articles.

1. Impact ionization in low-band-gap semiconductors driven by ultrafast terahertz excitation: Beyond the ballistic regime

2. Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy

3. Impact ionization in silicon

4. Concerning the theory of impact ionization in semiconductors;keldysh;JETP,1965

5. Subcycle Terahertz Nonlinear Optics

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