Fast THz Detection by an Asymmetric-Dual-Grating-Gate Graphene-Channel FET Based on Plasmonic and Photothermoelectric Effects-Reference-Cited by-同舟云学术

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Fast THz Detection by an Asymmetric-Dual-Grating-Gate Graphene-Channel FET Based on Plasmonic and Photothermoelectric Effects

Published:2023-09-17 Issue: Volume: Page:
ISSN:
Container-title:2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
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Author:

Tamura Koichi¹,Uchigasaki Shinnosuke¹,Seki Hironobu¹,Tang Chao¹,Ogiura Daichi¹,Suwa Kento¹,Fukidome Hirokazu¹,Takida Yuma²,Minamide Hiroaki²,Suemitsu Tetsuya³,Otsuji Taiichi¹,Satou Akira¹

Affiliation:

1. Tohoku University,Research Institute of Electrical Communication,Sendai,Japan,980-8577

2. RIKEN,RIKEN Center for Advanced Photonics,Sendai,Miyagi,Japan,980-0845

3. Tohoku University,New Industry Creation Hatchery Center,Sendai,Japan,980-0845

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10298848/10298849/10299381.pdf?arnumber=10299381

Reference8 articles.

1. Ultimate response time of high electron mobility transistors

2. Ultrabright continuously tunable terahertz-wave generation at room temperature

3. Precise control of epitaxy of graphene by microfabricating SiC substrate

4. Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell

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