On Cold Operation of an SiGe HBT as a Broadband Low-NEP THz Direct Detector
Author:
Affiliation:
1. Bergische Universität, Rainer-Gruenter-Str. 21,IHCT,Wuppertal,Germany,D-42119
2. IHP-Leibniz-Institut für Innovative Mikroelektronik,Frankfurt Oder,Germany,D-15236
Funder
Deutsche Forschungsgemeinschaft
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10298848/10298849/10299102.pdf?arnumber=10299102
Reference9 articles.
1. Broadband Modeling, Analysis, and Characterization of SiGe HBT Terahertz Direct Detectors
2. High-performance SiGe HBTs for next generation BiCMOS technology
3. A Lens-Coupled On-Chip Antenna for Dual-Polarization SiGe HBT THz Direct Detector
4. A Broadband Dual-Polarized Terahertz Direct Detector in a 0.13-μm SiGe HBT Technology
5. CMOS Integrated Antenna-Coupled Field-Effect Transistors for the Detection of Radiation From 0.2 to 4.3 THz
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Towards Passive Imaging With Uncooled, Low-NEP SiGe HBT Terahertz Direct Detectors;IEEE Transactions on Terahertz Science and Technology;2024-09
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