Carrier dynamics in InSe and the impact of terahertz pulses-Reference-Cited by-同舟云学术

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Carrier dynamics in InSe and the impact of terahertz pulses

Published:2022-08-28 Issue: Volume: Page:
ISSN:
Container-title:2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)
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Author:

Venanzi T.¹,Selig M.²,Pashkin A.¹,Winnerl S.¹,Katzer M.²,Arora H.¹,Erbe A.¹,Patane A.³,Kudrynskyi Z. R.³,Kovalyuk Z. D.⁴,Baldassarre L.⁵,Knorr A.²,Helm M.¹,Schneider H.¹

Affiliation:

1. Helmholtz-Zentrum Dresden-Rossendorf,Dresden,Germany,01328

2. Technical University Berlin,Berlin,Germany,10623

3. University of Nottingham,Nottingham,UK,NG7 2RD

4. The National Academy of Sciences of Ukraine,Chernivtsi,Ukraine,58001

5. University of Rome Sapienza,Rome,Italy,00185

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9895463/9895465/09895949.pdf?arnumber=9895949

Reference4 articles.

1. Terahertz control of photoluminescence emission in few-layer InSe

2. Photoluminescence dynamics in few-layer InSe

3. Resonant tunnelling into the two-dimensional subbands of InSe layers

4. Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe

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