Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell-Reference-Cited by-同舟云学术

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Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Published:2020-06-14 Issue: Volume: Page:
ISSN:
Container-title:2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
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Author:

Zehender Marius H.^ORCID,Svatek Simon A.^ORCID,Steiner Myles A.^ORCID,Garcia Ivan^ORCID,Linares Pablo Garcia^ORCID,Warren Emily L.^ORCID,Marti Antonio,Tamboli Adele C.^ORCID,Antolin Elisa^ORCID

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9300349/9300350/09301000.pdf?arnumber=9301000

Reference9 articles.

1. III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept;antolín;submitted to this conference,0

2. Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

3. Considerations for the Design of a Heterojunction Bipolar Transistor Solar Cell

4. Wafer reuse for repeated growth of III-V solar cells

5. Low temperature annealed Pd/Ge/Ti metal systems for concentrator inverted metamorphic solar cells

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress in three‐terminal heterojunction bipolar transistor solar cells;Progress in Photovoltaics: Research and Applications;2022-01-26

2. Characterization of multiterminal tandem photovoltaic devices and their subcell coupling;Cell Reports Physical Science;2021-12

3. III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept;2020 47th IEEE Photovoltaic Specialists Conference (PVSC);2020-06-14

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