Experimental measurement and simulation of thermal performance due to aging in power semiconductor devices
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/8075/22354/01043769.pdf?arnumber=1043769
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Thermal Onboard Detection of Voids in the Solder Layer Between Power Semiconductor and PCB;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-08
2. End-of-Life Detection of Power Electronic Converters by Exploiting an Application-Level Health Precursor;IEEE Open Journal of Power Electronics;2022
3. Experimental and Numerical Analysis of Melting and Solidification of SnAgCu Joints;IEEE Transactions on Components, Packaging and Manufacturing Technology;2016-09
4. Condition Monitoring: A Decade of Proposed Techniques;IEEE Industrial Electronics Magazine;2015-12
5. Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects;IEEE Transactions on Device and Materials Reliability;2014-03
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