A Fault Diagnosis Method for Silicon Carbide (SiC) Converters Based on ResNet
Author:
Affiliation:
1. Digital Grid Research Institute Co. LTD, China Southern Power Grid.,Guangzhou,China
2. Wuhan University,Wuhan,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10582916/10582978/10583431.pdf?arnumber=10583431
Reference12 articles.
1. A fast on-line diagnostic method for open-circuit switch faults;He;SiC-MOSFE T-based T-type multilevel inverters[J],2017
2. SiC technologies for future energy electronics
3. Analysis on the potential of Silicon Carbide MOSFETs and other innovative semiconductor technologies in the photovoltaic branch[C];Araújo,2009
4. Evaluation of H-bridge and half-bridge resonant converters in capacitive-coupled wireless charging
5. A new active EMI filter with virtual impedance enhancement
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