A Fault Diagnosis Method for Silicon Carbide (SiC) Converters Based on ResNet

Author:

Xie Ning1,Zhao Wei1,Lin Wenzhi1,Wang Zhenglei1,Zhang Shiqi2,Chen Jianfei2

Affiliation:

1. Digital Grid Research Institute Co. LTD, China Southern Power Grid.,Guangzhou,China

2. Wuhan University,Wuhan,China

Publisher

IEEE

Reference12 articles.

1. A fast on-line diagnostic method for open-circuit switch faults;He;SiC-MOSFE T-based T-type multilevel inverters[J],2017

2. SiC technologies for future energy electronics

3. Analysis on the potential of Silicon Carbide MOSFETs and other innovative semiconductor technologies in the photovoltaic branch[C];Araújo,2009

4. Evaluation of H-bridge and half-bridge resonant converters in capacitive-coupled wireless charging

5. A new active EMI filter with virtual impedance enhancement

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