Failure of Switching Operation of SiC-MOSFETs and Effects of Stacking Faults on Safe Operation Area-Reference-Cited by-同舟云学术

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Failure of Switching Operation of SiC-MOSFETs and Effects of Stacking Faults on Safe Operation Area

Published:2018-10 Issue:10 Volume:65 Page:4448-4454
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Fujita Ryusei^ORCID,Tani Kazuki,Konishi Kumiko,Shima Akio^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8469117/08445692.pdf?arnumber=8445692

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Online Junction Temperature Estimating Method for SiC MOSFETs Based on Steady-State Features and GPR;IEEE Transactions on Industrial Electronics;2024-10

2. Revisiting stacking fault identification based on the characteristic photoluminescence emission wavelengths of silicon carbide epitaxial wafers;Materials Science in Semiconductor Processing;2024-06

3. Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures;IEEE Transactions on Power Electronics;2023-07

4. A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching;Micromachines;2023-06-22

5. Pulsed Forward Bias Body Diode Stress of 1200 v SiC MOSFETs with Individual Mapping of Basal Plane Dislocations;Materials Science Forum;2023-06-05

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