Gate Driver Design for Cryogenically Cooled Power Electronic Converters-Reference-Cited by-同舟云学术

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Gate Driver Design for Cryogenically Cooled Power Electronic Converters

Published:2024-05 Issue:3 Volume:34 Page:1-6
ISSN:1051-8223
Container-title:IEEE Transactions on Applied Superconductivity
language:
Short-container-title:IEEE Trans. Appl. Supercond.

Author:

Deriszadeh Adel¹^ORCID,Zeng Xianwu¹^ORCID,Surapaneni Ravi-Kiran²,Galla Gowtham²,Nilsson Emelie³^ORCID,Rouquette Jean-francois³,Ybanez Ludovic³^ORCID,Pei Xiaoze⁴^ORCID

Affiliation:

1. Department of Mechanical Engineering, University of Bath, Bath, U.K.

2. Airbus UpNext, Taufkirchen, Germany

3. Airbus UpNext, Blangnac, France

4. Department of Electronics and Electrical Engineering, University of Bath, Bath, U.K.

Funder

U.K. Aerospace Technology Institute

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/77/10339679/10422859.pdf?arnumber=10422859

Reference23 articles.

1. Cryogenically-Cooled Power Electronics for Long-Distance Aircraft

2. Performance evaluation of low power DC/DC converter modules at cryogenic temperatures

3. ASCEND: The first step towards cryogenic electric propulsion

4. Comprehensive Characterization of the 4H-SiC Planar and Trench Gate MOSFETs From Cryogenic to High Temperature

5. Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of semiconductor devices and other power electronics components at cryogenic temperature;iEnergy;2024-06

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