Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon–Carbon Source/Drain and Tensile-Stress Liner-Reference-Cited by-同舟云学术

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Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon–Carbon Source/Drain and Tensile-Stress Liner

Published:2007-04 Issue:4 Volume:28 Page:301-304
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ang Kah-Wee,Chui King-Jien,Tung Chih-Hang,Balasubramanian N.,Li Ming-Fu,Samudra Ganesh S.,Yeo Yee-Chia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4137626/04137627.pdf?arnumber=4137627

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carbon- and Tin- Incorporated Source/Drain Stressors for CMOS Transistors;ECS Transactions;2019-12-18

2. Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03

3. Comprehensive investigation on array-type dummy active diffused region and gate geometries using narrow NMOSFETs with SiC S/D stressors;International Journal of Nanotechnology;2016

4. Substrate Doping Concentration Dependence of Electron Mobility Enhancement in Uniaxial Strained (110)/<110> nMOSFETs;JSTS:Journal of Semiconductor Technology and Science;2014-10-30

5. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures;Microelectronic Engineering;2014-08

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