An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology-Reference-Cited by-同舟云学术

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An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology

Published:2007-10 Issue:10 Volume:42 Page:2099-2106
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Trotta Saverio,Knapp Herbert,Aufinger Klaus,Meister Thomas F.,Bock Josef,Dehlink Bernhard,Simburger Werner,Scholtz Arpad L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/4317684/04317715.pdf?arnumber=4317715

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 100-GBd Linear Optical Modulator Driver for Short-Reach Links in 130-nm SiGe:C BiCMOS;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

2. A 68-GHz Loss Compensated Distributed Amplifier Using Frequency Interleaved Technique in 65-nm CMOS Technology;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2022-01

3. A 97-GHz 66-dBΩ SiGe BiCMOS Low-Noise Transimpedance Amplifier for Optical Receivers;IEEE Microwave and Wireless Components Letters;2021-12

4. Optically clocked switched-emitter-follower THA in a photonic SiGe BiCMOS technology;Optics Express;2021-05-12

5. A 1 to 32 GHz broadband multi-octave receiver for monolithic integrated vector network analyzers in SiGe technology;International Journal of Microwave and Wireless Technologies;2018-06

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