An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers-Reference-Cited by-同舟云学术

An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers

Published:2007-10 Issue:10 Volume:42 Page:2137-2148
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Metzger A.G.,Ramanathan R.,Jiang Li ,Hsiang-Chih Sun ,Cismaru C.,Hongxiao Shao ,Rushing L.,Weller K.P.,Ce-Jun Wei ,Yu Zhu ,Klimashov A.,Tkachenko Y.A.,Bin Li ,Zampardi P.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/4317684/04317704.pdf?arnumber=4317704

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