8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology-Reference-Cited by-同舟云学术

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8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology

Published:2010-01 Issue:1 Volume:45 Page:111-119
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Kang Uksong,Chung Hoe-Ju,Heo Seongmoo,Park Duk-Ha,Lee Hoon,Kim Jin Ho,Ahn Soon-Hong,Cha Soo-Ho,Ahn Jaesung,Kwon DukMin,Lee Jae-Wook,Joo Han-Sung,Kim Woo-Seop,Jang Dong Hyeon,Kim Nam Seog,Choi Jung-Hwan,Chung Tae-Gyeong,Yoo Jei-Hwan,Choi Joo Sun,Kim Changhyun,Jun Young-Hyun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/5357544/05357550.pdf?arnumber=5357550

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