Plasma charging damage on silicon surface during reverse-AA oxide etching in poly-buffered STI (PB-STI) isolation process-Reference-Cited by-同舟云学术

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Plasma charging damage on silicon surface during reverse-AA oxide etching in poly-buffered STI (PB-STI) isolation process

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Container-title:2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat. No.01TH8538)
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Author:

Liou Y.H.,Chen Y.S.,Wu C.S.,Tsai C.S.,Chi M.

Publisher

American Vacuum Soc

Link

http://xplorestaging.ieee.org/ielx5/7404/20112/00929972.pdf?arnumber=929972

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma charging defect characterization, inspection, and monitors in poly-buffered STI;IEEE Transactions on Semiconductor Manufacturing;2002-11

2. Plasma charging defect inspection and monitors in poly-buffered STI;2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)

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