A V-Band Cascoded Low Noise Amplifier with Path Coupling between Gate and Source Terminals in 90-nm CMOS
Author:
Affiliation:
1. National Chung Hsing University,Department of Electrical Engineering,Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10221213/10220948/10221542.pdf?arnumber=10221542
Reference8 articles.
1. A low noise amplifier with coupled matching structure for V-band applications
2. A 50–67-GHz Ultralow-Power LNA Using Double-Transformer-Coupling Technique and Self-Resonant Matching in 90-nm CMOS
3. A 60-GHz high-gain, low-power, 3.7-dB noise-figure low-noise amplifier in 90-nm CMOS;kuo;Nuremberg Germany,2013
4. A wideband gain-boosting 8mW LNA with 23 dB gain and 4 dB NF in 65nm CMOS process for 60 GHz applications;cohen;IEEE RFIC2012 Montreal Canada,2012
5. A 55–64-GHz Low-Power Small-Area LNA in 65-nm CMOS With 3.8-dB Average NF and ~12.8-dB Power Gain
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