Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry
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Published:2015-04
Issue:4
Volume:62
Page:1092-1097
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ISSN:0018-9383
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Container-title:IEEE Transactions on Electron Devices
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language:
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Short-container-title:IEEE Trans. Electron Devices
Author:
Yonghun Kim ,Young Gon Lee ,Ukjin Jung ,Jin Ju Kim ,Minhyeok Choe ,Kyong Taek Lee ,Sangwoo Pae ,Jongwoo Park ,Byoung Hun Lee
Funder
Industrial Strategic Technology Development Program through the Ministry of Trade, Industry and Energy (MOTIE), Korea
Future Semiconductor Device Technology Development Program through MOTIE and Korea Semiconductor Research Consortium
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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1. Introduction to Microwave Reflectometry;Advances in Reflectometric Sensing for Industrial Applications;2016